منابع مشابه
Electrical transport properties of CaB
Jolanta Stankiewicz,1,* Javier Sesé,2 Geetha Balakrishnan,3 and Zachary Fisk4 1Instituto de Ciencia de Materiales de Aragón and Departamento de Fı́sica de la Materia Condensada, CSIC–Universidad de Zaragoza, 50009-Zaragoza, Spain 2Instituto de Nanociencia de Aragón and Departamento de Fı́sica de la Materia Condensada, Universidad de Zaragoza, 50018-Zaragoza, Spain 3Department of Physics, Universi...
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Submitted for the MAR08 Meeting of The American Physical Society Electrical Transport Properties of Nanostructured YBa2Cu3O7−δ Rings and Wires1 P. MORALES, J.Y.T. WEI, Dept. of Physics, University of Toronto, P.C. KUO, J. SHIUE, M.K. WU, Institute of Physics, Academia Sinica Taiwan — The resistance and current-voltage characteristics of nanostructured high-Tc superconducting YBa2Cu3O7−δ rings a...
متن کاملElectrical transport properties of individual gold nanowires
S. Karim, W. Ensinger, C. Hassel, T. W. Cornelius, J. L. Duan, R. Neumann Physics Division, PINSTECH, Islamabad, Pakistan; Darmstadt University of Technology, Darmstadt, Germany; Department of physics, University of Duisburg-Essen, Germany; GSI, Darmstadt, Germany; IMP, CAS Lanzhou, P R China Metallic nanowires are regarded as essential components for the development of nanoelectronic devices. ...
متن کاملElectrical transport properties of single bismuth nanowires
Due to its unique electronic properties bismuth is of enormous interest for studies on the nanoscale. In particular, when the object size is comparable to the mean free path of charge carriers le (~ 100 nm and ~ 400 μm at 300 and 4 K, respectively [1]), mesoscopic effects such as electron scattering at both surface [2] and grain boundaries [3] become significant. For investigating the influence...
متن کاملElectrical transport properties of single-layer WS2.
We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment and that long in situ annealing drastically improves the contact transparency, allowing four-terminal measurements to be performed and the pri...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2014
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.90.155128